2
RF Device Data
Freescale Semiconductor
MRF8S9220HR3 MRF8S9220HSR3
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
1C
(Minimum)
Machine Model (per EIA/JESD22-A115)
A
(Minimum)
Charge Device Model (per JESD22-C101)
IV
(Minimum)
Table 4. Electrical Characteristics (TA
= 25
°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS
= 70 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS
= 28 Vdc, V
GS
= 0 Vdc)
IDSS
?
?
1
μAdc
Gate-Source Leakage Current
(VGS
= 5 Vdc, V
DS
= 0 Vdc)
IGSS
?
?
1
μAdc
On Characteristics
Gate Threshold Voltage
(VDS
= 10 Vdc, I
D
= 400
μAdc)
VGS(th)
1.5
2.2
3
Vdc
Gate Quiescent Voltage
(VDD
= 28 Vdc, I
D
= 1600
mAdc, Measured in Functional Test)
VGS(Q)
2.3
3.1
3.8
Vdc
Drain-Source On-Voltage
(VGS
= 10 Vdc, I
D
= 4 Adc)
VDS(on)
0.1
0.2
0.3
Vdc
Functional Tests
(1)
(In Freescale Test Fixture, 50 ohm system) VDD
= 28 Vdc, I
DQ
= 1600 mA, P
out
= 65 W Avg., f = 960 MHz,
Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Gps
18.0
19.4
21.0
dB
Drain Efficiency
ηD
34.0
35.7
?
%
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
PAR
5.7
6.1
?
dB
Adjacent Channel Power Ratio
ACPR
?
-37.4
-35
dBc
Input Return Loss
IRL
?
-13
-8
dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD
= 28 Vdc, I
DQ
= 1600 mA, P
out
= 65 W Avg.,
Single-Carrier W-CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz
Channel Bandwidth @ ±5 MHz Offset.
Frequency
Gps
(dB)
D
(%)
Output PAR
(dB)
ACPR
(dB)
IRL
(dB)
920 MHz
19.7
35.1
6.1
-37.4
-13
940 MHz
19.8
35.3
6.2
-37.5
-24
960 MHz
19.4
35.7
6.1
-37.4
-13
1. Part internally matched both on input and output.
(continued)
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